Conference
Region of nearly constant off current versus gate length characteristics for sub-0.1 mu m low power CMOS technology
Authors
Lau WS; Yang P; Ng ETL; Chian ZW; Ho V; Siah SY; Chan L
Pagination
pp. 231-+
Publisher
IEEE
Publication Date
January 1, 2008
ISBN-13
978-1-4244-2539-6
Name of conference
IEEE International Conference of Electron Devices and Solid-State Circuits
Conference place
Hong Kong, PEOPLES R CHINA
Conference start date
December 8, 2008
Conference end date
December 10, 2008
Conference proceedings
EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS