Growth of Nd1.85Ce0.15CuO4+δ thin films by laser ablation

We report the sucessful preparation of Nd1.85Ce0.15CuO4+δ thin films grown by laser ablation. By carefully controlling the oxygen content of the film through high temperature vacuum anneals it is possible to obtain a superconductor with a transition temperature which has an onset at 21 K. The high temperature annealing can result in a copper deficient surface. Through the use of energy dispersive X-ray analysis we have adjusted the growth parameters to minimize this effect. The films are highly oriented as indicated by the presence of (001) reflections in the θ-2θ X-ray diffraction scan. The surfaces of the films show the presence of particulates, but the outgrowths often seen in YBa2Cu3O7−δ films are absent.