Conference
Photochemical etching of n-InP: temperature, power and frequency studies
Abstract
Photochemical (PC) etching of n-InP using an Ar/sup +/ laser and dilute phosphoric acid solutions was studied as a function of temperature, power, illumination frequency, and duty cycle. The process was found to be reaction-rate limited with an activation energy >or=0.34 eV. The photo-etch rate, i.e. the etch rate divided by the fraction of time the Ar/sup +/ light is on, was found to be a function of the illumination duty cycle but not the …
Authors
Lowes TD; Cassidy DT
Pagination
pp. 203-206
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1990
DOI
10.1109/iciprm.1990.203017
Name of conference
International Conference on Indium Phosphide and Related Materials