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Bonding stress measurements from the degree of...
Journal article

Bonding stress measurements from the degree of polarization of facet emission of AlGaAs superluminescent diodes

Abstract

Mechanical stress induced by bonding AlGaAs superluminescent diodes to Cu, SiC, or diamond heat sinks using 40% Pb-60% Sn or 80% Au-20% Sn solder has been observed using measurements of the degree of polarization of the facet emission at low current levels. Stresses up to 10/sup 9/ dyn/cm/sup 2/ were observed, with the magnitude of the stress dependent on the solder used, and the sign of the stress dependent on the difference in thermal …

Authors

Colbourne PD; Cassidy DT

Journal

IEEE Journal of Quantum Electronics, Vol. 27, No. 4, pp. 914–920

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

April 1991

DOI

10.1109/3.83326

ISSN

0018-9197