Journal article
Effect of doping profile on the output power of broadly tuneable InGaAsP/InP asymmetric multiple quantum well lasers: finite element method simulations and experimental results
Authors
Enshasy HM; Cassidy DT
Journal
IET Optoelectronics, Vol. 6, No. 1, pp. 57–65
Publisher
Institution of Engineering and Technology (IET)
Publication Date
February 1, 2012
DOI
10.1049/iet-opt.2011.0003
ISSN
1751-8768