Journal article
Polarization of the output of InGaAsP semiconductor diode lasers
Abstract
Measurements of the degree of polarization ( rho ) of the output of 1.3- mu m InGaAsP semiconductor diode lasers as a function of current are discussed. It is found that rho measured for well below threshold ( rho /sub b/) is a better indicator of mechanical strain in the active region than rho measured near or above threshold. rho /sub b/ exhibits little dependence on drive level, mode reflectivity, threshold, or saturation of the gain. A …
Authors
Cassidy DT; Adams CS
Journal
IEEE Journal of Quantum Electronics, Vol. 25, No. 6, pp. 1156–1160
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
June 1989
DOI
10.1109/3.29241
ISSN
0018-9197