Journal article
Imaging of stresses in GaAs diode lasers using polarization-resolved photoluminescence
Abstract
Images of stress distributions in GaAs-based diode lasers have been obtained using scanned polarization-resolved photoluminescence. A stress resolution of about 10/sup 7 /dyn/cm/sup 2 /and a spatial resolution of about 1 mu m have been obtained. The experimental technique is described, and measured stress distributions due to ridge structures, metallization, applied force, and bonding are presented.<>
Authors
Colbourne PD; Cassidy DT
Journal
IEEE Journal of Quantum Electronics, Vol. 29, No. 1, pp. 62–68
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
1993
DOI
10.1109/3.199245
ISSN
0018-9197