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On the Evolution of Carrier Distribution and...
Journal article

On the Evolution of Carrier Distribution and Wavelength Switching in Asymmetric Multiple Quantum-Well Lasers

Abstract

The evolution of the carrier distribution with current in two different asymmetric multiple quantum laser structures was studied experimentally through measurements of electroluminescence (EL). The EL was measured through the substrates of lasers and provided information about the carrier distributions. The carrier concentration was observed to increase with current both below and above threshold, presumably owing to the change of threshold conditions. The switch of the lasing wavelength from long to short wavelength was explained by inhomogeneous broadening of the gain of the wells and by incomplete clamping of the carrier concentration above threshold, as inferred from the measured EL and gain spectra. The role of thermal effects was investigated by comparing the laser performance under continuous-wave and pulsed operation.

Authors

Wang H; Bruce DM; Cassidy DT

Journal

IEEE Journal of Quantum Electronics, Vol. 43, No. 3, pp. 243–248

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

March 1, 2007

DOI

10.1109/jqe.2006.889749

ISSN

0018-9197

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