selected scholarly activity
-
conferences
- (Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence. ECS Transactions. 43-55. 2020
- Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry. Journal of Electronic Materials. 4964-4969. 2018
- Optical Characterizations of VCSEL for Emission at 850 nm with Al Oxide Confinement Layers. Journal of Electronic Materials. 4987-4992. 2018
- Evidence of quantum confined stark effect due to doping profile in InAsP/InP quantum well structures and its modification by ion bombardment. 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS). 1-1. 2016
- Composition profiles in InP/InAsP quantum well structures under the effect of reactives gases during dry etching processes — Luminescence and SIMS. 26th International Conference on Indium Phosphide and Related Materials (IPRM). 1-2. 2014
- Residual mechanical stress decrease in GaAs-based laser diodes via a bi-material investigation. Proceedings of SPIE - The International Society for Optical Engineering. 2011
- Physical modeling of mechanical and thermal properties of 980 nm high-power laser diodes on composite submounts. 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC). 1-1. 2011
- Passive components integration in CMOS technology. European Solid-State Device Research Conference. 118-121. 2010
- GaAs-based laser diode bonding-induced stress investigation by means of simulation and Degree of Polarization of photoluminescence measurements. 2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE). 1-6. 2010
- Bond Reliability Improvement at High Temperature by Pd Addition on Au Bonding Wires. 2008 10th Electronics Packaging Technology Conference. 800-807. 2008
- InP Surface Properties under ICP Plasma Etching using Mixtures of Chlorides and Hydrides. 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings. 278-281. 2006
- Integrated Mach-Zehnder Interferometer on SU-8 Polymer for Designing Pressure Sensors. IEEE Sensors, 2005.. 640-643. 2005
- Spatially-resolved spectroscopic strain measurements at high-power diode laser bars. Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges. 599-599. 2002
- Microphotoluminescence mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes. Proceedings of SPIE - The International Society for Optical Engineering. 308-316. 2000
-
journal articles
- (Invited) Spatially–Resolved Luminescence Properties of Etched Quantum Well Microstructures. ECS Meeting Abstracts. MA2024-01:1332-1332. 2024
- Optical and Mechanical Properties of Si-Based Thin Films for Photonic Applications. ECS Meeting Abstracts. MA2023-02:1171-1171. 2023
- Mechanical and optical properties of amorphous silicon nitride-based films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 41. 2023
- Degree of polarization of luminescence from InP under SiN stripes: fits to FEM simulations. Optics Continuum. 2:1505-1505. 2023
- Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe. Optics. 4:272-287. 2023
- (Invited) Low-Temperature Spatially-Resolved Luminescence Spectroscopy of Microstructures with Strained III-V Quantum Wells. ECS Meeting Abstracts. MA2022-01:1090-1090. 2022
- PECVD Silicon Nitride-Based Multilayers with Optimized Mechanical Properties. ECS Meeting Abstracts. MA2022-01:1052-1052. 2022
- Chemical imaging of oxide confinement layers in GaAs/AlxGa1−xAs VCSELs. Semiconductor Science and Technology. 37:075016-075016. 2022
- Polarimetric photoluminescence microscope for strain imaging on semiconductor devices. Applied Optics. 61:1307-1307. 2022
- Strain engineering in III-V photonic components through structuration of SiNx films. Journal of Vacuum Science and Technology B. 40. 2022
- Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells. Journal of Physics D: Applied Physics. 54:445106-445106. 2021
- Mechanical and Optical Properties of Amorphous SiN-Based Films Prepared By ECR PECVD and CCP PECVD. ECS Meeting Abstracts. MA2021-01:858-858. 2021
- Stress Engineering of Dielectric Films on Semiconductor Substrates. ECS Meeting Abstracts. MA2021-01:857-857. 2021
- Mechanical strain mapping of GaAs based VCSELs. Applied Physics Letters. 118. 2021
- Mechanical stress in InP and GaAs ridges formed by reactive ion etching. Journal of Applied Physics. 128. 2020
- Photoluminescence mapping of the strain induced in InP and GaAs substrates by SiN stripes etched from thin films grown under controlled mechanical stress. Thin Solid Films. 706:138079-138079. 2020
- Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation. Applied Optics. 59:5506-5506. 2020
- (Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence. ECS Meeting Abstracts. MA2020-01:1073-1073. 2020
- Characterization of Plasma Induced Damage and Strain on InP Patterns and Their Impact on Luminescence. MRS Advances. 3:3373-3378. 2018
- Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces. Optics Letters. 43:3505-3505. 2018
- (Invited) Photo- and Cathodo-Luminescence of InAsxP(1-x)/InP Quantum Well Structures Under the Effects of Low-Energy Ion Bombardment. ECS Meeting Abstracts. MA2018-01:1146-1146. 2018
- Structural and Optical Properties of PECVD TiO2-SiO2Mixed Oxide Films for Optical Applications. Plasma Processes and Polymers. 13:918-928. 2016
- Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 34:041304. 2016
- Atomic scale study of InP etching by Cl2-Ar ICP plasma discharge. EPJ Applied Physics. 53:33606-33606. 2011
- Wearout estimation using the Robustness Validation methodology for components in 150°C ambient automotive applications. Microelectronics Reliability. 50:1744-1749. 2010
- Microthermography of diode lasers: The impact of light propagation on image formation. Journal of Applied Physics. 105:014502. 2009
- Degradation Mechanisms of Au–Al Wire Bonds During Qualification Tests at High Temperature for Automotive Applications: Quality Improvement by Process Modification. IEEE Transactions on Device and Materials Reliability. 8:484-489. 2008
- Sequential environmental stresses tests qualification for automotive components. Microelectronics Reliability. 47:1680-1684. 2007
- InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides. Materials Science in Semiconductor Processing. 9:225-229. 2006
- Spatially resolved spectroscopic strain measurements on high-power laser diode bars. Journal of Applied Physics. 93:1354-1362. 2003
- Micro-photoluminescence for the visualisation of defects, stress and temperature profiles in high-power III–V's devices. Materials Science & Engineering B: Solid-State Materials for Advanced Technology. 91-92:55-61. 2002
- Packaging-induced stress distribution in high power AlGaAs laser diodes by photoluminescence mapping. Materials Science & Engineering B: Solid-State Materials for Advanced Technology. 80:188-192. 2001
- High Resolution Auger Imaging Combined with Focused Ion Beam for the Investigation of Metal/GaAs Contacts in High Power Transistors. Materials Research Society Symposium - Proceedings. 514:467. 1998
- Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy. Physical review B (PRB). 46:1886-1888. 1992