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Si core-level excitation of hexamethyldisilane...
Journal article

Si core-level excitation of hexamethyldisilane studied by synchrotron radiation and multiple-scattering X α calculation

Abstract

The Si 1s, Si 2s and Si 2p core-level photoabsorption spectra of hexamethyldisilane have been recorded by synchrotron radiation and calculated by the multiple-scattering (MS) X α method. The results of the calculation are in semiquantitative agreement with the experimental spectra. The relative intensity of corresponding transitions at the (1s, 2s) or (2p) edges differs greatly on account of atomic-like propensity rules (s → p, p → s, d). …

Authors

Xiong JZ; Jiang DT; Liu ZF; Baines KM; Sham TK; Urquhart SG; Wen AT; Tyliszczak T; Hitchcock AP

Journal

Chemical Physics, Vol. 203, No. 1, pp. 81–92

Publisher

Elsevier

Publication Date

February 1996

DOI

10.1016/0301-0104(95)00353-3

ISSN

0301-0104