Journal article
Local microstructures of Si in GaN studied by x-ray absorption spectroscopy
Abstract
Si K-edge x-ray absorption spectroscopy (XAFS) has been used to study the local structure of Si dopant in GaN crystalline material. Doping concentrations NSi from 8.0×1016 to 4.4×1019 cm−3 were investigated. It is observed that the near-edge spectra vary significantly as a function of NSi. At low concentrations the Si K-edge spectra exhibit features similar to that obtained from N K-edge measurement, while at high concentrations the near-edge …
Authors
Lu ZH; Tyliszczak T; Broderson P; Hitchcock AP; Webb JB; Tang H; Bardwell J
Journal
Applied Physics Letters, Vol. 75, No. 4, pp. 534–536
Publisher
AIP Publishing
Publication Date
July 26, 1999
DOI
10.1063/1.124439
ISSN
0003-6951