The effects of annealing on disorder preservation in ion implanted InP

N+ and Bi ions have been implanted, at 40 keV or 1 MeV, into InP substrates maintained at 40 or 300 K during implantation. Implantation induced In disorder was measured using RBS/channelling either immediately after or following fixed periods after implantation. The effects upon disorder of varying N+ flux density for different N+ fluences were studied for the 40 keV, 300 K implant conditions.The results show that, for 40 keV implants, thermally unstable disorder can anneal both during and after implantation and that this annealing is reduced as the near surface layer approaches and becomes amorphised. The higher energy implants reveal the operation of similar thermal annealing processes and show that disorder production is most closely correlated with elastic slowing processes.