Journal article
The effects of annealing on disorder preservation in ion implanted InP
Abstract
N+ and Bi ions have been implanted, at 40 keV or 1 MeV, into InP substrates maintained at 40 or 300 K during implantation. Implantation induced In disorder was measured using RBS/channelling either immediately after or following fixed periods after implantation. The effects upon disorder of varying N+ flux density for different N+ fluences were studied for the 40 keV, 300 K implant conditions.The results show that, for 40 keV implants, …
Authors
Kostic S; Nobes MJ; Carter G; Davies JA; Stevanovic DV; Thompson DA
Journal
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Vol. 19, , pp. 422–426
Publisher
Elsevier
Publication Date
1987
DOI
10.1016/s0168-583x(87)80083-6
ISSN
0168-583X