Journal article
High‐responsivity InGaAs/InP‐based MSM photodetector operating at 1.3‐μm wavelength
Abstract
A high‐responsivity, low‐capacitance and high‐speed metal‐semiconductor‐metal photodetector (MSM‐PD) with layer structure In0.85Ga0.15P/InP/InGaAs/InP has been fabricated and characterized. For a 50 μm × 50 μm device with 2‐μm finger width and 2‐μm finger spacing we obtained a front illumination at 1.3‐μm wavelength responsivity of 0.71–0.73 A/W at 5‐V bias. To the best of our knowledge this is the highest front illumination responsivity for …
Authors
Matin MA; Song KC; Robinson BJ; Simmons JG; Thompson DA
Journal
Microwave and Optical Technology Letters, Vol. 12, No. 6, pp. 310–313
Publisher
Wiley
Publication Date
August 20, 1996
DOI
10.1002/(sici)1098-2760(19960820)12:6<310::aid-mop2>3.0.co;2-i
ISSN
0895-2477