Journal article
Evaluation of H-plasma and thermal oxide desorption procedures for MBE regrowth of an InP/InGaAs/InP quantum well
Abstract
An InGaAs single quantum well structure has been used to investigate the effect of H-plasma exposure for oxide removal and subsequent regrowth on InP surfaces. In addition, the H-plasma desorption is compared with the usual technique of thermal desorption of the oxide. Assessment of the optical quality of the regrowth interface has been achieved by photoluminescence (PL), photoluminescence excitation (PLE) and photoreflectance (PR) spectroscopy …
Authors
Drouot V; Robinson BJ; Thompson DA; Bru C; Benyattou T; Guillot G
Journal
Semiconductor Science and Technology, Vol. 11, No. 8,
Publisher
IOP Publishing
Publication Date
August 1, 1996
DOI
10.1088/0268-1242/11/8/011
ISSN
0268-1242