Journal article
Growth of InGaAs/InP structures by gas source molecular beam epitaxy on SiO2-patterned substrates for optoelectronic applications
Abstract
Gas source molecular beam epitaxy has been used to grow InGaAs/InP epitaxial quantum-well structures in selected areas defined by SiO2-masked InP substrates, with the goal of obtaining controlled in-plane variations in the band gap of the InGaAs wells. The dependence of the band gap on mask dimensions, growth temperature and arsenic flux has been studied. Photoluminescence spectroscopy performed on waveguide stripes, ranging from 2–50 μm in …
Authors
Nagy SC; Robinson BJ; Thompson DA; Simmons JG; Nuban MF; Krawczyk SK; Buchheit M; Blanchet RC
Journal
Journal of Crystal Growth, Vol. 177, No. 1-2, pp. 1–5
Publisher
Elsevier
Publication Date
5 1997
DOI
10.1016/s0022-0248(96)01015-9
ISSN
0022-0248