Comparison of ion beam mixing at room temperature and 40 K

Ion beam mixing in Ni amorphous Si has been compared at room temperature and 40 K by monitoring the spreading of thin embedded impurity layers in samples mounted on a stage that could be cryo-cooled. The markers were ∽ 10 Å layers of Ge and Sn in an amorphous Si matrix and a ∽30 Å layer of Si in a Ni matrix, and the mixing was induced by 100 keV Ar+ ions. The marker distribution was monitored in situ by helium ion backscattering spectrometry …