Defect production and stability in high-energy-density cascades in Ni

Ion implantation into Ni single crystals was carried out at 40 K and room temperature using monatomic Sb + and diatomic Sb 22 ions for implantation doses in the range ∼ 2 × 10 13−2 × 10 14Sb +cm −2. The damage level after each implant was measured in situ by observing the Rutherford backscattering yield of 2.0 MeV 4He + ions channeled along the 〈110〉 axis. More damage is retained for low temperature Sb + and Sb 2+ implants and room temperature Sb 2+ than for Sb + implants at room temperature. In the ion fluence regime studied the damage retained, N D, is a non-linear function of ion fluence Φ.