Measurement of damage distributions in ion bombarded Si, GaP and GaAs at 50 K

A combined accelerator system is described in which implantations (10–150 keV) can be carried out at temperatures as low as ∼50 K and in situ channeling-backscattering analysis can be undertaken using 0.5–3.5 MeV He+ ions or protons. Damage profiles have been obtained for Si, GaP and GaAs bombarded at 50 K with He+, N+, and Zn+. The analytical procedure by which the profiles are extracted from the backscatter spectra is detailed.