Journal article
Measurement of damage distributions in ion bombarded Si, GaP and GaAs at 50 K
Abstract
A combined accelerator system is described in which implantations (10–150 keV) can be carried out at temperatures as low as ∼50 K and in situ channeling-backscattering analysis can be undertaken using 0.5–3.5 MeV He+ ions or protons. Damage profiles have been obtained for Si, GaP and GaAs bombarded at 50 K with He+, N+, and Zn+. The analytical procedure by which the profiles are extracted from the backscatter spectra is detailed.
Authors
Walker RS; Thompson DA
Journal
Nuclear Instruments and Methods, Vol. 135, No. 3, pp. 489–495
Publisher
Elsevier
Publication Date
6 1976
DOI
10.1016/0029-554x(76)90063-x
ISSN
0029-554X