Journal article
Collision cascades in silicon
Abstract
Individual damaged regions formed in silicon during low fluence (1011–1012 ions cm−2) ion bombardments (∼30–200 amu ions of 15–100 keV energy) were observed using transmission electron microscopy. Both monatomic and diatomic ions were used in order to investigate the role of average deposited energy density θυ in determining the characteristics of the damaged regions. The efficiency of creating a visible damaged region was <0.1 forθυ<0.1 eV/atom, but increased to 0.7–1.0 for θυ > 0.4 eV/atom. The …
Authors
Howe LM; Rainville MH; Haugen HK; Thompson DA
Journal
Nuclear Instruments and Methods, Vol. 170, No. 1-3, pp. 419–425
Publisher
Elsevier
Publication Date
3 1980
DOI
10.1016/0029-554x(80)91051-4
ISSN
0029-554X