Disorder production and amorphisation in ion implanted silicon

Measurements of the depth profiles of disorder and the depth integrated disorder produced in Si at 40 K or 300 K by low energy (15 keV-60 keV) ions of a range of masses from the light (N+ and P+), intermediate (Ar+ and As+) to heavy (In+, Sb+, As+ 2, Bi and Sb+ 2) were made using Rutherford scattering-dechannelling techniques. Studies of both the ‘surface peak’ disorder and the dechannelling minimum indicate a gradual change in the process of …