Journal article
Extraction of Electron and Hole Ionization Coefficients From Metamorphically Grown InGaSb Diodes
Abstract
Metamorphic pseudosubstrates of In0.15Ga0.85Sb are grown on p- and n-type GaSb substrates using InxGa1-xSb buffer layers compositionally graded in steps of x=0.03. Extensive material characterization was done on the metamorphic layers to determine the in-plane lattice constant, density of threading and misfit dislocations, and surface roughness by high-resolution X-ray diffraction, cross-sectional and plan-view transmission electron microscopy, …
Authors
Mohammedy FM; Deen MJ; Thompson DA
Journal
IEEE Transactions on Electron Devices, Vol. 56, No. 3, pp. 523–528
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
March 1, 2009
DOI
10.1109/ted.2008.2011930
ISSN
0018-9383