Quantum well intermixing of a quantum well structure grown on an InAsP metamorphic pseudosubstrate on InP

InGaAsP quantum well (QW) structures, with ∼1% compressive strain, have been grown on an InAs0.21P0.79 metamorphic substrate layer (MSL) deposited on an InP substrate. For comparison, a similar QW structure is grown directly on InP. A consequence of growth on the MSL is to move the QW and barrier compositions outside the spinodal isotherm resulting in a significant reduction in phase separation. This is shown to increase the photoluminescence …