Journal article
Quantum well intermixing enhanced by InP grown by He-plasma assisted GaS source MBE
Abstract
Studies have been carried out on the enhancement of quantum well intermixing (QWI) using the defects present in an epitaxial layer of InP grown by He-plasma assisted gas source molecular beam epitaxy (He*–InP). The structures investigated were single and double InGaAsP quantum wells (QW) with an InGaAsP barrier. QWI was implemented using rapid thermal annealing (RTA) and measured using low-temperature photoluminescence (PL) spectroscopy. …
Authors
Zhang S; Thompson DA; Robinson BJ
Journal
Semiconductor Science and Technology, Vol. 18, No. 6,
Publisher
IOP Publishing
Publication Date
June 1, 2003
DOI
10.1088/0268-1242/18/6/324
ISSN
0268-1242