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Tritium profiling using the T(d, 4He)n reaction
Journal article

Tritium profiling using the T(d, 4He)n reaction

Abstract

A detailed analysis has been carried out in the use of the T(d, 4He)n reaction for profiling tritium in solids over depths to ~ l μm. Calculations have been undertaken to show how the depth resolution and detection sensitivity vary with the profiling geometry. Degradation of the depth resolution as a function of depth has been determined considering energy and angular straggling effects as well as experimental factors, such as detector …

Authors

Caterini M; Thompson DA; Wan PT; Sawicki JA

Journal

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Vol. 15, No. 1-6, pp. 535–539

Publisher

Elsevier

Publication Date

4 1986

DOI

10.1016/0168-583x(86)90358-7

ISSN

0168-583X