Quantum well intermixing in InGaAsP laser structures using a low temperature grown InP cap layer

Quantum well intermixing (QWI) in a 1.55 µm InGaAsP laser-like structure has been enhanced using the defects incorporated in an InP capping layer grown at low temperature (below the congruent sublimation temperature) by molecular beam epitaxy and subsequently subjected to rapid thermal annealing. The structures used had quantum wells (QWs) and barrier layers with identical group III compositions so the inter-diffusion occurs only on the group V …