Journal article
Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy
Abstract
Lateral composition modulation (LCM) in InGaAsP layers (1500 Å) and quantum wells (50 Å) grown on (100) InP substrates by gas source molecular beam epitaxy were studied over a wide alloy range. Layers with lattice mismatches of −0.5% (compression), 0% (lattice-matched) and +0.5% (tension) were studied using photoluminescence, transmission electron microscopy and X-ray diffraction. Greater compositional fluctuations were observed for tensile …
Authors
LaPierre RR; Okada T; Robinson BJ; Thompson DA; Weatherly GC
Journal
Journal of Crystal Growth, Vol. 158, No. 1-2, pp. 6–14
Publisher
Elsevier
Publication Date
1 1996
DOI
10.1016/0022-0248(95)00364-9
ISSN
0022-0248