Energy spikes in Si and Ge due to heavy ion bombardment

The number of displaced atoms/ion, N*D , produced by heavy ion bombardment (10-250 keV) of Si and Ge at 35 K is reported. A semi-empirical formulation is given, based upon the separation of the damage into a “spike” component and a “collisional” component, which adequately predicts N*D , for all ions and energies investigated. The “spike” concept is also tested by investigation of damage enhancement effects occuring for diatomic bombardment …