Journal article
Investigation of cross-hatch in In0.3Ga0.7As pseudo-substrates
Abstract
Metamorphic buffer layers offer a wide variety of lattice constants for substrate on which devices can be grown. However, almost in all cases, the surface of the pseudo-substrate contains striations which are known as “cross-hatch.” Although, it is accepted that this surface undulation is related with the underlying gridlike misfit dislocations (MDs), the exact correlation is still to be determined. In this article, degree of polarization of …
Authors
Saha S; Cassidy DT; Thompson DA
Journal
Journal of Applied Physics, Vol. 113, No. 12,
Publisher
AIP Publishing
Publication Date
March 28, 2013
DOI
10.1063/1.4796104
ISSN
0021-8979