Journal article
Compositional variations in InGaAsP films grown on patterned substrates
Abstract
A comparison of the growth behaviour of lattice-matched In0.53 Ga0.47 As and In0.74 Ga0.26 As0.59P0.41 films on InP substrates, patterned as diffraction gratings, has been carried out using analytical electron microscopy. Ga enrichment above the ridge of the grating was found in both the ternary and quaternary alloys. In the final stages of growth of a 100 nm thick ternary alloy film, the Ga enrichment was confined to a narrow strip, 3 nm in …
Authors
Mullan CA; Weatherly GC; Thompson DA
Journal
Journal of Crystal Growth, Vol. 182, No. 3-4, pp. 266–274
Publisher
Elsevier
Publication Date
12 1997
DOI
10.1016/s0022-0248(97)00359-x
ISSN
0022-0248