High-resistivity regions in n -type InGaAsP produced by ion bombardment at different temperatures

The formation of high-resistivity regions in Si-doped (n=1×1018 cm−3) lattice-matched In0.75Ga0.25As0.54P0.46 on InP by nitrogen and boron ion irradiations at 300 K, and by helium ion bombardment at 80, 300, and 523 K has been investigated as function of ion dose (1×1012–1×1016 cm−2) and subsequent anneal temperature (70–650 °C) by sheet resistance and Hall effect measurements. The dose dependence of the sheet resistance shows two regions for …