Comparison of quantum well intermixing in GaAs structures using a low temperature grown epitaxial layer or a SiO2 cap

Studies of quantum well intermixing (QWI) have been performed on Al-free GaAs based structures in which InGaAs quantum wells (QWs) have either GaAs barriers or InGaAsP quaternary barriers such that the barrier-QW compositional change consists solely of a group III change (GaAs barrier) or a group V change (quaternary barrier). These structures permit identification of the sublattice upon which intermixing occurs when the point defects …