Journal article
Strained layer (1.5 μm) InP/InGaAsP lasing opto-electronic switch (LOES)
Abstract
We present for the first time a lasing opto-electronic switch (LOES) fabricated in the InP/InGaAsP system. In this device the active region is composed of four 63 /spl Aring/ compressively strained quantum wells. A lasing threshold of 104 mA, or 6933 A/cm2, has been observed at a temperature of 298 K, with an external differential quantum efficiency of 14%. The lasing wavelength is centered at 1.52 μm. The current-voltage characteristics …
Authors
Swoger JH; Qiu C; Simmons JG; Thompson DA; Shepherd F; Beckett D; Cleroux M
Journal
IEEE Photonics Technology Letters, Vol. 6, No. 8, pp. 927–929
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
August 1, 1994
DOI
10.1109/68.313054
ISSN
1041-1135