Journal article
Planar channeling in GaAs/In x Ga1− x As/GaAs strained-layer structures
Abstract
Planar {110} channeling measurements with 1–2-MeV He+ ions have been used to investigate strained-layer structures of (100) GaAs/InxGa1−xAs/GaAs with x=0.07–0.17. Beam-steering effects in the surface GaAs layer are observed to have a major influence on {110} planar angular scans carried out in the InxGa1−xAs layers resulting generally in a double or more complex-shaped angular dip. A simple computer simulation has been developed which …
Authors
Stevens JLE; Robinson BJ; Davies JA; Thompson DA; Jackman TE
Journal
Journal of Applied Physics, Vol. 65, No. 4, pp. 1510–1515
Publisher
AIP Publishing
Publication Date
February 15, 1989
DOI
10.1063/1.342966
ISSN
0021-8979