Inelastic stopping of medium energy light ions in silicon

The channeling technique has been used to determine the disorder distributions in silicon bombarded at 45 K with a 10-80 keV H+, He+, Li+, B+, C+, N+, O+, and Ne+ (v < eI/h). Comparison of these measured distributions with calculated deposited energy distributions obtained using a Monte-Carlo technique yields quantitative data on the inelastic stopping cross-section. For random incidence we find that the inelastic stopping cross-section for silicon is larger than the Lindhard value and exhibits a Z 1 dependent variation in qualitative agreement with earlier foil transmission experiments.