Deformation of copper single crystals to large strains at 4.2 K

Transmission electron microscopy (TEM) observations of the dislocation substructure developed in high-purity single crystals of Cu deformed at 4.2 K have been carried out in order to relate the detailed defect structures to the mechanical and electrical properties discussed in part I. The results based on weak-beam TEM show that the dislocation substructure contains a very high density of narrow dislocation dipoles of vacancy character. These …