Journal article
Picosecond carrier lifetime and large optical nonlinearities in InGaAsP grown by He-plasma-assisted molecular beam epitaxy.
Abstract
We report the measurement of a fast carrier lifetime and large band-gap-resonant optical nonlinearities in an InGaAsP sample grown by He-plasma-assisted molecular beam epitaxy. Using a 2-microm-thick sample grown on an InP substrate, we observed a carrier lifetime of 15 ps and an index change as large as 0.077 induced by an intense 1-ps pulse at a wavelength of 1.57 microm. Good crystalline structure is maintained in the material during growth, …
Authors
Qian L; Benjamin SD; Smith PW; Robinson BJ; Thompson DA
Journal
Optics Letters, Vol. 22, No. 2, pp. 108–110
Publisher
Optica Publishing Group
Publication Date
January 15, 1997
DOI
10.1364/ol.22.000108
ISSN
0146-9592