A Si BiCMOS Transimpedance Amplifier for 10-Gb/s SONET Receiver

A transimpedance amplifier packaged with an InP p-i-n photodiode has been demonstrated for 10-Gb/s SONET receiver. The shunt feedback transimpedance amplifier is fabricated in $0.25-\mu \text{m}$ modular Si BiCMOS technology. The transimpedance of 55 $\text{dB}\Omega$ is achieved at a bandwidth of 9 GHz by applying shunt peaking and filter termination at the input. The optical sensitivity of −17 dBm was measured at 10 Gb/s for a bit-error rate of 10−12.