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Intrinsic electron-pumping mechanism in the...
Journal article

Intrinsic electron-pumping mechanism in the oscillating-barrier turnstile

Abstract

Coulomb-blockade-based oscillating-barrier turnstile devices have recently been proposed as possible future current standards. In the present work we study the sidebands in the tunneling probability generated by an oscillating barrier, and discuss how the presence of these sidebands will affect the accuracy of an oscillating-barrier turnstile device.

Authors

White JD; Wagner M

Journal

Physical Review B, Vol. 48, No. 4, pp. 2799–2802

Publisher

American Physical Society (APS)

Publication Date

July 15, 1993

DOI

10.1103/physrevb.48.2799

ISSN

2469-9950