Tunable Schottky and ohmic contacts in graphene and Pd3X2Y8(X=P, As; Y=S, Se) monolayer van der Waals heterostructures

To achieve high-performance devices, it is important to reduce the Schottky barrier height and transition from Schottky contact to ohmic contact. This study investigates the effects of interlayer coupling and biaxial strain on the electronic structure and contact characteristics of three van der Waals heterostructures composed of Pd3P2S8, Pd3As2S8, Pd3As2Se8, and graphene (Pd3P2S8/G, Pd3As2S8/G and Pd3As2Se8/G) using first principles. The …