Numerical Simulations of Space Charge Waves Amplification Using Negative Differential Conductance in Strained Si/SiGe at 4.2 K

This paper introduces a two-dimensional (2D) numerical simulation of the amplification of space charge waves using negative differential conductance in a typical MOS silicon–germanium (SiGe)-based field-effect transistors (FET) and complementary metal oxide semiconductor (CMOS) technology at 4.2 K. The hydrodynamic model of electron transport was applied to describe the amplification of space charge waves in this nonlinear medium (i.e., the …