Micro-photoluminescence for the visualisation of defects, stress and temperature profiles in high-power III–V's devices

Different applications of the micro-photoluminescence (μ-PL) mapping technique to the evaluation of semiconductor devices are described in this paper, based on detailed analyses of the PL spectral line-shape. The applications covered are connected to the general field of reliability investigations for III–V semiconductor high-power devices, like GaAs-based microwave transistors or laser diode arrays. Derived from a study of the local PL …