Journal article
InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides
Abstract
This study is specifically related to Cl2-based plasma etching of InP surfaces. The analyses are carried out as a function of plasma parameters such as the gas pressure, RF power and the percentage of the chlorine. X-ray photoelectron spectroscopy allowed to compare the surface kinetics of both the chlorine plasma and the more conventional CH4/H2 plasma mixture. For the first time, a P-rich surface is obtained with the Cl2-ICP conditions used, …
Authors
Liu B; Landesman J-P; Leclercq J-L; Rhallabi A; Cardinaud C; Guilet S; Pommereau F; Avella M; González MA; Jiménez J
Journal
Materials Science in Semiconductor Processing, Vol. 9, No. 1-3, pp. 225–229
Publisher
Elsevier
Publication Date
February 2006
DOI
10.1016/j.mssp.2006.01.064
ISSN
1369-8001