Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe

Measurements of the cathodoluminescence (CL) and the degree of polarization (DOP) of (CL) from the facet of a GaAs substrate and in the vicinity of a SiN stripe are reported and analyzed. The deformation induced by the SiN stripe is estimated by fitting the measured DOP to 3D finite element method (FEM) simulations. The deformation is found to be more complex than an initial condition of biaxial stress in the SiN. A ratio of fit coefficients …