Preprint
Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)
Abstract
The selective area growth of Ga-assisted GaAs nanowires (NWs) with a high
vertical yield on Si(111) substrates is still challenging. Here, we explore
Authors
Küpers H; Tahraoui A; Lewis RB; Rauwerdink S; Matalla M; Krüger O; Bastiman F; Riechert H; Geelhaar L
Publication date
August 8, 2017
DOI
10.48550/arxiv.1708.02454
Preprint server
arXiv