Preprint
Trapped charge dynamics in InAs nanowires
Abstract
We study random telegraph noise in the conductance of InAs nanowire
field-effect transistors due to single electron trapping in defects. The
Authors
Holloway GW; Song Y; Haapamaki CM; LaPierre RR; Baugh J
Publication date
September 14, 2012
DOI
10.48550/arxiv.1209.3237
Preprint server
arXiv