Preprint
Phosphorus-Controlled Nanoepitaxy in the Asymmetric Growth of GaAs-InP Core-Shell Bent Nanowires
Abstract
Breakthroughs extending nanostructure engineering beyond what is possible
with current fabrication techniques will be crucial for enabling
Authors
McDermott S; Smith TR; LaPierre RR; Lewis RB
Publication date
May 12, 2023
DOI
10.48550/arxiv.2305.07252
Preprint server
arXiv