Preprint
Defect free strain relaxation of microcrystals on mesoporous patterned silicon
Abstract
A perfectly compliant substrate would allow the monolithic integration of
high-quality semiconductor materials such as Ge and III-V on Silicon (Si)
Authors
Heintz A; Ilahi B; Pofelski A; Botton G; Patriarche G; Barzaghi A; Fafard S; Arès R; Isella G; Boucherif A
Publication date
March 28, 2022
DOI
10.48550/arxiv.2203.14839
Preprint server
arXiv