Preprint
Configuration Dependence of Band Gap Narrowing and Localization in Dilute GaAs_{1-x} Bi_x Alloys
Abstract
Anion substitution with bismuth (Bi) in III-V semiconductors is an effective
method for experimental engineering of the band gap Eg at low Bi
Authors
Bannow LC; Rubel O; Rosenow P; Badescu SC; Hader J; Moloney JV; Tonner R; Koch SW
Publication date
February 5, 2016
DOI
10.48550/arxiv.1602.02112
Preprint server
arXiv