Preprint
Alloying strategy for two-dimensional GaN optical emitters
Abstract
The recent progress in formation of two-dimensional (2D) GaN by a
migration-enhanced encapsulated technique opens up new possibilities for group
Authors
Pashartis C; Rubel O
Publication date
July 14, 2017
DOI
10.48550/arxiv.1707.04625
Preprint server
arXiv