Preprint
Stacking defects in GaP nanowires: Electronic structure and optical properties
Abstract
Formation of twin boundaries during the growth of semiconductor nanowires is
very common. However, the effects of such planar defects on the electronic and
Authors
Gupta D; Goktas NI; Rao A; LaPierre R; Rubel O
Publication date
October 2, 2018
DOI
10.48550/arxiv.1810.01194
Preprint server
arXiv